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Charge Carrier Dynamics and Defect-Assisted Recombination in Emerging Semiconductor Materials

Students & Supervisors

Student Authors
Md. Kawser Uddin
Bachelor of Science in Computer Science & Engineering, FST
Supervisors
Md. Mortuza Ahmmed
Associate Professor, Faculty, FST

Abstract

Charge carrier lifetime and defect assisted recombination are important factors affecting the performance of next generation semiconductor materials. In this study we plot the carrier lifetime, magnitude of defects, and resulting device efficiency versus time from data collected between 1995 and 2024. The figure shows that over time there has been a gradual increase in carrier lifetime, reduction in defect magnitude and an increase in device efficiency. The lifetime of carriers is low and defect-assisted recombination is high at the beginning of the study. As a result, there are fewer chances of the charge carriers surviving long enough to be collected which leads to lower device efficiency. However, over time the defect density reduces allowing for longer carrier lifetimes. As the carrier lifetime increases so does the devices efficiency as plotted in the figure above. By 2024 the carriers have the highest lifetime and devices show the highest efficiency. Defect assisted recombination has been greatly reduced and has the lowest effect on the carriers when compared to other years. This plotted data shows that there is a strong correlation between reducing defect assisted recombination and increasing carrier lifetime and device efficiency

Keywords

Keywords: Charge Carrier Lifetime Defect-Assisted Recombination Device Efficiency Semiconductor Materials Carrier Dynamics

Publication Details

  • Type of Publication:
  • Conference Name: International Conference on Physics 2026
  • Date of Conference: 04/09/2026 - 04/09/2026
  • Venue: Department of Physics, University of Dhaka
  • Organizer: Bangladesh Physical Society
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