Course Details

EEE 5201 Semiconductor Materials and Heterostructures

3 credit hours (3 hours of theory per week)

 

Since the mid-20th Century the electronics industry has enjoyed phenomenal growth and is now the largest industry in the world. The foundation of the electronics industry is the semiconductor device. To meet the tremendous demand of this industry, the semiconductor-device field has also grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a course, giving a comprehensive introductory account of  semiconductor materials and its device physics. The problem and how intelligent choices on doping, geometry and heterostructures will impact devices. In this course takes the students on a journey providing them with an understanding of both fundamental and advanced device-physics concepts as well as introducing them to the development of realistic device models which can be taking place in heterostructures to the practical issues involved in designing high performance heterostructure devices.

This course is divided into four parts. The first part, Fundamental of Semiconductor Materials: atom to crystal structures, heterostructure materials, quantum wells, superlattices, and types of band alignment. Fundamental theory of heterostructures: Semiclassical to Quantum. Metal-Semiconductor physics. In essence, these topics comprise the basic physics needed to study fairly broad classes of semiconductor material for device applications.

 

The second part, Semiconductor material growth techniques: Czochralski Method, Bridgman Method, Chemical vapor deposition (CVD), Metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), metal organic molecular beam epitaxy (MOMBE), Sputtering, hydride vapor phase epitaxy (HVPE), Pulsed laser deposition (PLD), Atomic layer deposition (ALD). The basic ideas of growth process are discussed.

The third part, properties of semiconductor material and characterization process are discussed. Structural and chemical properties: Crystalline structure and quality, Crystalline defects, Polarity study, strain relaxation, structural properties of double side heterostructures, Chemical properties and etching. Electrical properties: Background defects, Hall mobility and electron concentration, Doping. Optical properties: Optical band gap energy, Variation in optical band gap energy, Raman scattering and IR absorption, optical properties of double side heterostructures. These topics include with the characterization process: Scanning electron microscopy (SEM), Atomic force microscopy (AFM), X-ray photon electron spectroscopy (XPS), X-ray diffraction (XRD), Photo luminance (PL).

The four part, solid state heterostructural optoelectronic and electronic devices such as LED, LASER, optoelectronic functionality in silicon chip, heterojunction avalanche photodiode, structural and electrical study of modulation doped field-effect transistors (MODFET), hetrojunction field-effect transistor (HFET), high electron mobility transistor (HEMT), heterojunction bipolar transistors (HBT), metal-oxide field-effect transistor (MOSFET), metal-oxide high electron mobility transistor (MOSHEMT).

EEE 5009 Quantum Phenomena in Nanostructure

3 credit hours (3  hours of theory per week)

 

Nanotechnology is design, fabrication and application of nanostructures or nanomaterials, and the fundamental understanding of the relationships between physical properties or phenomena and material dimensions. Nanotechnology deals with materials or structures in nanometer scales, typically ranging from subnanometers to several hundred nanometers. Materials in the micrometer scale mostly exhibit physical properties the same as that of bulk form; however, materials in the nanometer scale may exhibit physical properties distinctively different from that of bulk. Therefore classical models for electric device behavior must be abandoned. These new physical properties rely on purely quantum phenomena. To prepare for the next generation of electronic devices, this course teaches the theory of current, voltage and resistance from atoms up.

This course is divided into three parts. The first part, Fundamentals of quantum mechanics: Effective-mass Schrodinger Equation, Matrix representation, Green’s Function; Fundamentals of non equilibrium statistical mechanics, Scattering and relaxation; Carrier transport: Density of states, current, tunneling and transmission probabilities, introduction to transport in the collective picture. In essence, these topics comprise the basic physics needed to study fairly broad classes of nanoelectronic devices.

 

The second part, Single-Electron and Few-Electron Phenomena and Devices, introduces the concept of tunneling, and describes related phenomena such as Coulomb blockade. These ideas are then applied to explain the fundamental principles of what are called single-electron devices, including the single-electron transistor. These types of devices have generated a lot of excitement in the electronics field, and are expected to play an important role in future electronic and photonic system. The operation of these single-electron devices relies on the movement of single electrons (more generally, on the movement of relatively small numbers of electrons). This marks a major departure from conventional electronic devices, which use many more electrons in their operation.

The third part, Many Electron Phenomena, describes classical and quantum statistics and related electron phenomena. These concepts are applied to semiconductor quantum wells, wires, and dots, complementing similar material discussed in Part I. Then, ballistic transport is described, where electrons pass through a region of space that is small compared to the mean free path. Thus, ideally, electrons don't scatter in transversing the material, necessitating a vastly different concept of resistance than encountered in conventional, macroscopic circuits.

 

 

EEE 5105 Fiber-Optic Communication Systems

3 credit hours (3 hours of theory per week)

 

Electromagnetic theory of guided waves: Maxwell’s equations, ray optics, wave optics. Optical fibers : mode analysis, solutions for step-index fibers, dispersion and losses, graded-index fiber, single-mode fiber, fiber manufacture, cables and components, connectors, joints and couplers, fiber transducers. Optical sources and detectors: laser principles, semiconductor junction lasers, LEDs, fiber interface couplings, Photodetectors (APD and PIN). Fiber communications: digital transmission requirements, pulse dispersion, fiber bandwidth, rise-time, optical transmitters, regenerators, amplifiers, system losses, performance standards, design of digital fiber system, DWDM systems, submarine cables.

 

EEE 5207: Optimization of Power System Operation

3 credit hours (3 hours of theory per week)

 

• General principles of optimization, its application to power system planning, design and operation.
• Probability analysis of bulk power security and outage data.
• Economic operation of power system – economic operation of thermal plants, combined thermal and hydro-electric plants.
• Theory of economic operation of interconnected areas.
• Development and application of transmission loss formulae for economic operation of power systems.
• Methods of optimum scheduling and tools for economic dispatch.
• Operation of power systems with renewable energy resources

 

TE 504: Mobile Communications/ EEE 5111: Mobile Communication

3 credit hours (3 hours of theory per week)

 

Evolution of Mobile Radio Communications, Present Day Mobile Communication, Fundamental Techniques, Radio Transmission Techniques: (i) Simplex System (ii) Half Duplex System (iii) Full

Duplex System, Cellular Concept, Frequency reuse, Network Cells, Types of Cells, Handover,

Roaming, Operational Channels, Making a Call, 1G: First Generation Networks, 2G: Second

Generation Networks, 3G: Third Generation Networks, 4G: Fourth Generation Networks, Channel Assignment Strategies, Handoff Process, Interference & System Capacity, Design trade-off of Cell, Antennas and antenna arrays, Free space radio wave propagation and transmission, Multi-path wave propagation and signal fading, Modulation techniques for mobile radio, Equalization and diversity in mobile communications, Channel coding for mobile communication systems, Multiple Access Techniques, Global System for mobile (GSM), Wireless standards, CDMA spread spectrum concept,

WCDMA and 3G Evolution, HSPA and LTE for UMTS, WiMAX and mobile IP, 4G LTE/LTEAdvanced for mobile broadband.